2SC5317FT_07 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Silicon NPN Epitaxial Planar Type VHF-UHF Band Low Noise Amplifier Applications

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5317FT
2SC5317FT
VHF-UHF Band Low Noise Amplifier Applications
(chip: f_T = 16 GHz series)
Unit: mm
• Low Noise Figure :NF = 1.3dB (f = 2GHz)
• High Gain:|S21e|² = 9dB (f = 2GHz)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector-Current
Base-Current
Collector Power dissipation
Junction temperature
Storage temperature Range
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
Rating
Unit
8
V
5
V
1.5
V
20
mA
10
mA
100
mW
125
°C
−55~125
°C
Note:Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
TESM
JEDEC
―
JEITA
―
TOSHIBA
2-1B1A
Weight:0.0022g (typ.)
Microwave Characteristics (Ta = 25°C)
Characteristics
Transition Frequency
Insertion Gain
Noise Figure
Symbol
fT
|S21e|² (1)
|S21e|² (2)
NF (1)
NF (2)
Test Condition
V_CE = 3 V, I_C = 15 mA
V_CE = 3 V, I_C = 15 mA, f = 1 GHz
V_CE = 3 V, I_C = 15 mA, f = 2 GHz
V_CE = 3 V, I_C = 5 mA, f = 1 GHz
V_CE = 3 V, I_C = 5 mA, f = 2 GHz
Min Typ. Max Unit
9
―
― GHz
12
15
―
dB
6
9
―
―
0.9
1.8
dB
―
1.3
2.2
Electrical Characteristics (Ta = 25°C)
haracteristics
Symbol
CTest Condition
Min Typ. Max Unit
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Output Capacitance
Reverse Transistor Capacitance
I_CBO
I_EBO
h_FE
C_ob
C_re
V_CB = 8 V, I_E = 0
―
V_EB = 1 V, I_C = 0
―
V_CE = 3 V, I_C = 15 mA
50
―
V_CB = 2.5 V, I_E = 0, f = 1 MHz (Note )
―
―
1
µA
―-
1
µA
―
250
0.6
―
pF
0.4 0.85 pF
Note : C_re is measured by 3 terminal method with capacitance Bridge.
1
2007-11-01