2SC5233_07 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Silicon NPN Epitaxial Type (PCT process)

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC5233
General Purpose Amplifier Applications
Switching and Muting Switch Application
2SC5233
Unit: mm
• Low saturation voltage: V_{CE (sat)} (1) = 15 mV (typ.)
@I_C = 10 mA/I_B = 0.5 mA
• Large collector current: I_C = 500 mA (max)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V_CBO
15
V
Collector-emitter voltage
V_CEO
12
V
Emitter-base voltage
V_EBO
5
V
Collector current
I_C
500
mA
Base current
I_B
50
mA
Collector power dissipation
P_C
100
mW
Junction temperature
Storage temperature range
T_j
125
°C
T_stg
−55~125
°C
JEDEC
JEITA
―
SC-70
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
TOSHIBA
2-2E1A
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
Weight: 0.006 g (typ.)
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Marking
1
2007-11-01