2SC5232_03 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – General Purpose Amplifier Applications

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC5232
General Purpose Amplifier Applications
Switching and Muting Switch Application
2SC5232
Unit: mm
· Low saturation voltage: VCE (sat) (1) = 15 mV (typ.)
@IC = 10 mA/IB = 0.5 mA
· Large collector current: IC = 500 mA (max)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
Rating
Unit
15
V
12
V
5
V
500
mA
50
mA
150
mW
125
°C
-55~125
°C
Marking
JEDEC
TO-236MOD
JEITA
SC-59
TOSHIBA
2-3F1A
Weight: 0.012 g (typ.)
1
2003-03-27