2SC5208 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Silicon NPN Triple Diffused Type High-Voltage Switching Applications

TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5208
High-Voltage Switching Applications
Switching Regulator Applications
DC-DC Converter Applications
DC-AC Inverter Applications
2SC5208
Unit: mm
• High-speed switching: t_r = 1.0 μs (max) ,t_f = 1.5 μs (max)
• High breakdown voltage: V_CEO = 400 V
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power dissipation
Junction temperature
Storage temperature range
V_CBO
V_CEO
V_EBO
I_C
I_CP
I_B
P_C
T_j
T_stg
600
V
400
V
7
V
0.8
A
1.5
0.5
A
1.3
W
150
°C
−55~150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-8M1A
Weight: 0.55 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2006-11-13