2SC5201_06 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Silicon NPN Triple Diffused Mesa Type High-Voltage Switching Applications

TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type
2SC5201
High-Voltage Switching Applications
2SC5201
Unit: mm
• High breakdown voltage: V_CEO = 600 V
• Low saturation voltage: V_{CE (sat)} = 1.0 V (max)
(I_C = 20 mA, I_B = 0.5 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power dissipation
Junction temperature
Storage temperature range
V_CBO
V_CEO
V_EBO
I_C
I_CP
I_B
P_C
T_j
T_stg
600
V
600
V
7
V
50
mA
100
25
mA
900
mW
150
°C
−55 to 150
°C
JEDEC
JEITA
TO-92MOD
―
Note: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-5J1A
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
Weight: 0.36 g (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2006-11-10