2SC5198OQ Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – Power Amplifier Applications

TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5198
Power Amplifier Applications
2SC5198
Unit: mm
• High breakdown voltage: V_CEO = 140 V (min)
• Complementary to 2SA1941
• Suitable for use in 70-W high fidelity audio amplifier’s output stage
Absolute Maximum Ratings (T_a = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V_CBO
140
V
Collector-emitter voltage
V_CEO
140
V
Emitter-base voltage
V_EBO
5
V
Collector current
I_C
10
A
Base current
I_B
1
A
Collector power dissipation
(T_c = 25°C)
Junction temperature
Storage temperature range
P_C
100
W
T_j
150
°C
T_stg
−55 to 150
°C
JEDEC
JEITA
TOSHIBA
―
―
2-16C1A
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
Weight: 4.7 g (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2010-11-02