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2SC5197_06 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – Silicon NPN Triple Diffused Type Power Amplifier Applications | |||
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TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5197
Power Amplifier Applications
2SC5197
Unit: mm
⢠Complementary to 2SA1940
⢠Suitable for use in 55-W high fidelity audio amplifierâs output stage
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
120
V
Collector-emitter voltage
VCEO
120
V
Emitter-base voltage
VEBO
5
V
Collector current
Base current
Collector power dissipation
(Tc = 25°C)
IC
8
A
IB
0.8
A
PC
80
W
Junction temperature
Storage temperature range
Tj
150
°C
Tstg
â55 to 150
°C
JEDEC
â
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
JEITA
TOSHIBA
â
2-16C1A
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
Weight: 4.7 g (typ.)
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(âHandling Precautionsâ/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2006-11-10
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