2SC5196_06 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – Silicon NPN Triple Diffused Type Power Amplifier Applications

TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5196
Power Amplifier Applications
2SC5196
Unit: mm
• Complementary to 2SA1939
• Suitable for use in 40-W high fidelity audio amplifier’s output stage
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V_CBO
80
V
Collector-emitter voltage
V_CEO
80
V
Emitter-base voltage
V_EBO
5
V
Collector current
Base current
Collector power dissipation
(Tc = 25°C)
I_C
6
A
I_B
0.6
A
P_C
60
W
Junction temperature
Storage temperature range
T_j
150
°C
T_stg
−55 to 150
°C
JEDEC
―
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
JEITA
TOSHIBA
―
2-16C1A
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
Weight: 4.7 g (typ.)
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2006-11-10