2SC5175_04 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – High-Current Switching Applications

TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5175
High-Current Switching Applications
2SC5175
Unit: mm
• Low collector-emitter saturation voltage: VCE (sat) = 0.4 V (max)
(IC = 2.5 A, IB = 125 mA)
• High-speed switching: tstg = 0.8 µs (typ.)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_CP
I_B
P_C
T_j
T_stg
Rating
Unit
60
V
50
V
5
V
5
A
8
1
A
1.8
W
150
°C
−55 to 150
°C
Electrical Characteristics (Ta = 25°C)
JEDEC
―
JEITA
―
TOSHIBA
2-10T1A
Weight: 1.5 g (typ.)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Test Condition
I_CBO
I_EBO
V _{(BR) CEO}
h_{FE (1)}
h_{FE (2)}
V_{CE (sat)}
V_{BE (sat)}
f_T
C_ob
V_CB = 50 V, I_E = 0
V_EB = 6 V, I_C = 0
I_C = 10 mA, I_B = 0
V_CE = 1 V, I_C = 1 A
V_CE = 1 V, I_C = 2.5 A
I_C = 2.5 A, I_B = 125 mA
I_C = 2.5 A, I_B = 125 mA
V_CE = 4 V, I_C = 1 A
V_CB = 10 V, I_E = 0, f = 1 MHz
Min Typ. Max Unit
―
―
1
µA
―
―
1
µA
50
―
―
V
100 ― 320
60
―
―
― 0.25 0.4
V
―
1.0 1.3
V
― 100 ― MHz
―
45
―
pF
Turn-on time
Switching time Storage time
Fall time
t_on
Output
―
0.1
―
20 µs
Input ^IB1
t_stg
I_B2
―
0.8
―
µs
V_CC = 30 V
t_f
―
0.1
―
I_B1 = −I_B2 = 125 mA, duty cycle ≤ 1%
1
2004-07-26