2SC5174_04 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Power Amplifier Applications

TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5174
Power Amplifier Applications
Driver Stage Amplifier Applications
2SC5174
Unit: mm
• High transition frequency: fT = 100 MHz (typ.)
• Complementary to 2SA1932
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
Rating
Unit
230
V
230
V
5
V
1
A
0.1
A
1.8
W
150
°C
−55 to 150
°C
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
Test Condition
I_CBO
I_EBO
V _{(BR) CEO}
h_FE
V_{CE (sat)}
V_BE
f_T
C_ob
V_CB = 230 V, I_E = 0
V_EB = 5 V, I_C = 0
I_C = 10 mA, I_B = 0
V_CE = 5 V, I_C = 100 mA
I_C = 500 mA, I_B = 50 mA
V_CE = 5 V, I_C = 500 mA
V_CE = 10 V, I_C = 100 mA
V_CB = 10 V, I_E = 0, f = 1 MHz
JEDEC
―
JEITA
―
TOSHIBA
2-10T1A
Weight: 1.5 g (typ.)
Min Typ. Max Unit
―
―
1.0
µA
―
―
1.0
µA
230 ―
―
V
100 ― 320
―
―
1.5
V
―
―
1.0
V
― 100 ― MHz
―
20
―
pF
Marking
C5174
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
1
2004-07-26