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2SC5173_04 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – High-Voltage Switching and Amplifier Applications
2SC5173
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process)
2SC5173
High-Voltage Switching and Amplifier Applications
Color TV Horizontal Driver Applications
Color TV Chroma Output Applications
Unit: mm
• High breakdown voltage: VCEO = 300 V
• Small collector output capacitance: Cob = 3.0 pF (typ.)
• Collector metal (fin) is fully covered with mold resin.
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Rating
Unit
300
V
300
V
7
V
100
mA
50
mA
1.8
W
150
°C
−55 to 150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-10T1A
Weight: 1.5 g (typ.)
Electrical Characteristics (Ta = 25°C unless otherwise noted.)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Test Condition
ICBO
IEBO
hFE (1)
hFE (2)
VCE (sat)
VBE (sat)
fT
Cob
VCB = 240 V, IE = 0
VEB = 7 V, IC = 0
VCE = 10 V, IC = 4 mA
VCE = 10 V, IC = 20 mA
IC = 10 mA, IB = 1 mA
IC = 10 mA, IB = 1 mA
VCE = 10 V, IC = 20 mA
VCB = 20 V, IE = 0, f = 1 MHz
Min Typ. Max Unit
―
―
1.0
µA
―
―
1.0
µA
20
―
―
30
― 200
―
―
1.0
V
―
―
1.0
V
50
70
― MHz
―
3.0
―
pF
Marking
C5173
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
1
2004-07-26