2SC5154_04 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – Power Amplifier Applications

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC5154
Power Amplifier Applications
Driver Stage Amplifier Applications
2SC5154
Unit: mm
• High transition frequency: fT = 100 MHz (typ.)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_CP
I_B
P_C
T_j
T_stg
Rating
Unit
160
V
160
V
5
V
1.5
A
3.0
0.15
A
1.3
W
150
°C
−50 to 150
°C
Electrical Characteristics (Ta = 25°C)
JEDEC
―
JEITA
―
TOSHIBA
2-8M1A
Weight: 0.55 g (typ.)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
I_CBO
I_EBO
V _{(BR) CEO}
V_CB = 160 V, I_E = 0
V_EB = 5 V, I_C = 0
I_C = 10 mA, I_B = 0
h_FE
V_CE = 5 V, I_C = 100 mA
(Note)
V_{CE (sat)}
V_BE
I_C = 500 mA, I_B = 50 mA
V_CE = 5 V, I_C = 500 mA
f_T
V_CE = 10 V, I_C = 100 mA
C_ob
V_CB = 10 V, I_C = 0, f = 1 MHz
Note: h_FE classification O: 70 to 140, Y: 120 to 240
Marking
Min Typ. Max Unit
―
―
1.0
µA
―
―
1.0
µA
160 ―
―
V
70
― 240
―
―
1.0
V
― 0.75 0.95
V
― 100 ― MHz
―
25
―
pF
C5154
Characteristics
indicator
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
1
2004-07-07