2SC5108_07 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Silicon NPN Epitaxial Planar Type For VCO Application

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5108
2SC5108
For VCO Application
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Base current
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
V_CBO
V_CEO
V_EBO
I_B
I_C
P_C
T_j
T_stg
20
V
10
V
3
V
15
mA
30
mA
100
mW
125
°C
−55~125
°C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
JEDEC
―
JEITA
―
TOSHIBA
2-2H1A
Weight: 2.4 mg (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
Insertion gain
Output capacitance
Reverse transfer capacitance
Collector-base time constant
I_CBO
V_CB = 10 V, I_E = 0
⎯
I_EBO
V_EB = 1 V, I_C = 0
⎯
h_FE
V_CE = 5 V, I_C = 5 mA
80
(Note 1)
f_T
V_CE = 5 V, I_C = 5 mA
4
⎪S_21e⎪² V_CE = 5 V, I_C = 5 mA, f = 1 GHz
7
C_ob
C_re
C_c･rbb’
⎯
V_CB = 5 V, I_E = 0, f = 1 MHz (Note 2)
⎯
V_CB = 5 V, I_C = 3 mA, f = 30 MHz
⎯
⎯
0.1
μA
⎯
0.1
μA
⎯
240
6
⎯ GHz
11
⎯
dB
0.7
⎯
pF
0.5
0.9
pF
5.5
10
ps
Note 1: h_FE classification O: 80~160, Y: 120~240
Note 2: C_re is measured by 3 terminal method with capacitance bridge.
1
2007-11-01