2SC5108-Y Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – For VCO Application

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5108
2SC5108
For VCO Application
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Base current
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
V_CBO
V_CEO
V_EBO
I_B
I_C
P_C
T_j
T_stg
20
V
10
V
3
V
15
mA
30
mA
100
mW
125
°C
−55 to 125
°C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
JEDEC
―
operating temperature/current/voltage, etc.) are within the
JEITA
―
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
TOSHIBA
2-2H1A
Toshiba Semiconductor Reliability Handbook (“Handling
Weight: 2.4 mg (typ.)
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
1
2010-02-17