2SC5095-O Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – VHF~UHF Band Low Noise Amplifier Applications

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5095
2SC5095
VHF~UHF Band Low Noise Amplifier Applications
• Low noise figure, high gain.
• NF = 1.8dB, |S_21e|² = 7.5dB (f = 2 GHz)
Absolute Maximum Ratings (Ta = 25°C)
Unit: mm
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Base current
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
V_CBO
V_CEO
V_EBO
I_B
I_C
P_C
T_j
T_stg
20
V
10
V
1.5
V
7
mA
15
mA
100
mW
125
°C
−55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Microwave Characteristics (Ta = 25°C)
JEDEC
―
JEITA
SC-70
TOSHIBA
2-2E1A
Weight: 0.006 g (typ.)
Characteristics
Transition frequency
Insertion gain
Noise figure
Symbol
Test Condition
f_T
⎪S_21e⎪² (1)
⎪S_21e⎪² (2)
NF (1)
NF (2)
V_CE = 6 V, I_C = 7 mA
V_CE = 6 V, I_C = 7 mA, f = 1 GHz
V_CE = 6 V, I_C = 7 mA, f = 2 GHz
V_CE = 6 V, I_C = 3 mA, f = 1 GHz
V_CE = 6 V, I_C = 3 mA, f = 2 GHz
Min Typ. Max Unit
7
10
⎯ GHz
⎯
13
⎯
dB
4.5 7.5
⎯
⎯
1.4
⎯
dB
⎯
1.8
3.0
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Collector cut-off current
I_CBO
V_CB = 10 V, I_E = 0
⎯
Emitter cut-off current
I_EBO
V_EB = 1 V, I_C = 0
⎯
DC current gain
h_FE
V_CE = 6 V, I_C = 7 mA
50
(Note 1)
Output capacitance
Reverse transfer capacitance
C_ob
⎯
V_CB = 10 V, I_E = 0, f = 1 MHz (Note 2)
C_re
⎯
Note 1: h_FE classification R: 50~100, O: 80~160
Note 2: C_re is measured by 3 terminal method with capacitance bridge.
1
Typ. Max Unit
⎯
1
μA
⎯
1
μA
⎯
160
0.5
⎯
pF
0.4 0.85 pF
2007-11-01