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2SC5091FT_07 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications | |||
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TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5091FT
2SC5091FT
VHF~UHF Band Low Noise Amplifier Applications
⢠Low noise figure, high gain.
⢠NF = 1.1dB, |S21e|2 = 13dB (f = 1 GHz)
Absolute Maximum Ratings (Ta = 25°C)
Unit: mm
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Base current
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IB
IC
PC
Tj
Tstg
20
V
8
V
1.5
V
20
mA
40
mA
100
mW
125
°C
â55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (âHandling
Precautionsâ/âDerating Concept and Methodsâ) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Microwave Characteristics (Ta = 25°C)
JEDEC
â
JEITA
â
TOSHIBA
2-1B1A
Weight: 0.0022 g (typ.)
Characteristics
Transition frequency
Insertion gain
Noise figure
Symbol
Test Condition
fT
âªS21eâª2 (1)
âªS21eâª2 (2)
NF (1)
NF (2)
VCE = 8 V, IC = 20 mA
VCE = 8 V, IC = 20 mA, f = 1 GHz
VCE = 8 V, IC = 20 mA, f = 2 GHz
VCE = 8 V, IC = 5 mA, f = 1 GHz
VCE = 8 V, IC = 5 mA, f = 2 GHz
Min Typ. Max Unit
7
10
⯠GHz
10
13
â¯
dB
â¯
7
â¯
â¯
1.1
2.5
dB
â¯
1.7
â¯
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Collector cut-off current
ICBO
VCB = 10 V, IE = 0
â¯
Emitter cut-off current
IEBO
VEB = 1 V, IC = 0
â¯
DC current gain
hFE
VCE = 8 V, IC = 20 mA
50
(Note 1)
Output capacitance
Reverse transfer capacitance
Cob
â¯
VCB = 10 V, IE = 0, f = 1 MHz (Note 2)
Cre
â¯
Note 1: hFE classification R: 50~100, O: 80~160
Note 2: Cre is measured by 3 terminal method with capacitance bridge.
1
Typ. Max Unit
â¯
1
μA
â¯
1
μA
â¯
160
0.7
â¯
pF
0.5 0.95 pF
2007-11-01
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