2SC5087R Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5087R
2SC5087R
VHF~UHF Band Low Noise Amplifier Applications
• Low noise figure, high gain.
• NF = 1.1dB, |S_21e|² = 13dB (f = 1 GHz)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Base current
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
V_CBO
V_CEO
V_EBO
I_B
I_C
P_C
T_j
T_stg
20
V
12
V
3
V
40
mA
80
mA
150
mW
125
°C
−55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Microwave Characteristics (Ta = 25°C)
Unit: mm
SMQ
1.Base(B)
2.Emitter1(E1)
3.Collector(C)
4.Emitter(E2)
JEDEC
―
JEITA
―
TOSHIBA
―
Weight: 0.012 g (typ.)
Characteristic
Transition frequency
Insertion gain
Noise figure
Symbol
Condition
f_T
⎪S_21e⎪² (1)
⎪S_21e⎪² (2)
NF
V_CE = 10 V, I_C = 30 mA
V_CE = 5 V, I_C = 20 mA, f = 1 GHz
V_CE = 10 V, I_C = 30 mA, f = 1 GHz
V_CE = 10 V, I_C = 7 mA, f = 1 GHz
Min Typ. Max Unit
6
8
⎯ GHz
⎯ 12.5 ⎯
11 13.5 ⎯
dB
⎯
1.1
2
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Condition
Collector cut-off current
Emitter cut-off current
DC current gain
Output capacitance
Reverse transfer capacitance
I_CBO
I_EBO
h_FE
C_ob
C_re
V_CB = 10 V, I_E = 0
V_EB = 1 V, I_C = 0
V_CE = 10 V, I_C = 20 mA
V_CB = 10 V, I_E = 0, f = 1 MHz(Note 2)
Note 1: C_re is measured with a three-terminal method using a capacitance bridge.
1
Min Typ. Max Unit
⎯
⎯
1
μA
⎯
⎯
1
μA
120
⎯
240
⎯
⎯
1.1
1.6
pF
⎯ 0.65
1
pF
2007-11-01