2SC5087-Y Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – VHF~UHF Band Low Noise Amplifier Applications

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5087
2SC5087
VHF~UHF Band Low Noise Amplifier Applications
• Low noise figure, high gain.
• NF = 1.1dB, |S_21e|² = 13dB (f = 1 GHz)
Absolute Maximum Ratings (Ta = 25°C)
Unit: mm
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Base current
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
V_CBO
V_CEO
V_EBO
I_B
I_C
P_C
T_j
T_stg
20
V
12
V
3
V
40
mA
80
mA
150
mW
125
°C
−55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
Microwave Characteristics (Ta = 25°C)
JEDEC
―
JEITA
―
TOSHIBA
2-3J1C
Weight: 0.012 g (typ.)
Characteristics
Transition frequency
Insertion gain
Noise figure
Symbol
Test Condition
f_T
⎪S_21e⎪² (1)
⎪S_21e⎪² (2)
NF (1)
NF (2)
V_CE = 10 V, I_C = 20 mA
V_CE = 10 V, I_C = 20 mA, f = 500 MHz
V_CE = 10 V, I_C = 20 mA, f = 1 GHz
V_CE = 10 V, I_C = 5 mA, f = 500 MHz
V_CE = 10 V, I_C = 5 mA, f = 1 GHz
Min Typ. Max Unit
5
7
⎯
18
9.5
13
⎯
1
⎯
1.1
⎯ GHz
⎯
dB
⎯
⎯
dB
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Collector cut-off current
Emitter cut-off current
DC current gain
I_CBO
V_CB = 10 V, I_E = 0
I_EBO
V_EB = 1 V, I_C = 0
h_FE
V_CE = 10 V, I_C = 20 mA
(Note 1)
⎯
⎯
1
μA
⎯
⎯
1
μA
80
⎯
240
Output capacitance
Reverse transfer capacitance
C_ob
⎯
1.1
1.6
pF
V_CB = 10 V, I_E = 0, f = 1 MHz (Note 2)
C_re
⎯ 0.65 1.05 pF
Note 1: h_FE classification O: 80~160, Y: 120~240
Note 2: C_re is measured by 3 terminal method with capacitance bridge.
1
2007-11-01