2SC5076_04 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – High-Current Switching Applications.

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC5076
High-Current Switching Applications.
2SC5076
Unit: mm
• Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A)
• High-speed switching: tstg = 1.0 µs (typ.)
• Complementary to 2SA1905
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
Rating
Unit
60
V
50
V
5
V
5
A
1
A
1.3
W
150
°C
−55 to 150
°C
Electrical Characteristics (Ta = 25°C)
JEDEC
―
JEITA
―
TOSHIBA
2-8M1A
Weight: 0.55 g (typ.)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Test Condition
I_CBO
I_EBO
V _{(BR) CEO}
V_CB = 50 V, I_E = 0
V_EB = 5 V, I_C = 0
I_C = 10 mA, I_B = 0
h_{FE (1)}
V_CE = 1 V, I_C = 1 A
(Note)
h_{FE (2)}
V_{CE (sat)}
V_CE = 1 V, I_C = 3 A
I_C = 3 A, I_B = 0.15 A
V_{BE (sat)}
f_T
C_ob
I_C = 3 A, I_B = 0.15 A
V_CE = 4 V, I_C = 1 A
V_CB = 10 V, I_E = 0, f = 1 MHz
Min Typ. Max Unit
―
―
1
µA
―
―
1
µA
50
―
―
V
70
― 240
30
―
―
―
0.2 0.4
V
―
0.9 1.2
V
― 120 ― MHz
―
80
―
pF
Turn-on time
t_on
20 µs
Input ^IB1
Output
―
0.1
―
Switching time Storage time
t_stg
I_B2
Fall time
V_CC = 30 V
t_f
I_B1 = −I_B2 = 0.15 A, duty cycle ≤ 1%
Note: h_{FE (1)} classification O: 70 to 140, Y: 120 to 240
1
―
1.0
―
µs
―
0.1
―
2004-07-07