2SC5075_06 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Silicon NPN Triple Diffused Type Switching Regulator and High-Voltage Switching Applications

2SC5075
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5075
Switching Regulator and High-Voltage Switching
Applications
High-Speed DC-DC Converter Applications
Industrial Applications
Unit: mm
• High-speed switching: t_r = 1.0 μs (max), t_f = 1.0 μs (max)
• High breakdown voltage: V_CEO = 400 V
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V_CBO
500
V
Collector-emitter voltage
V_CEO
400
V
Emitter-base voltage
V_EBO
7
V
Collector current
I_C
2
A
Base current
I_B
0.5
A
Collector power dissipation
Junction temperature
P_C
1.3
W
T_j
150
°C
JEDEC
―
Storage temperature range
T_stg
−55 to 150
°C
JEITA
―
Note: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-8M1A
temperature/current/voltage and the significant change in
Weight: 0.55 g (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2006-11-10