2SC5030_04 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Strobe Flash Applications

TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5030
Strobe Flash Applications
Medium Power Amplifier Applications
2SC5030
Unit: mm
• High DC current gain : hFE (1) = 800 to 3200 (VCE = 2 V, IC = 0.5 A)
: hFE (2) = 250 (min) (VCE = 2 V, IC = 4 A)
• Low saturation voltage: VCE (sat) = 0.5 V (max)
(IC = 4 A, IB = 40 mA)
• High collector power dissipation: PC = 1.3 W
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
DC
Collector current
Pulse
(Note)
Base current
Collector power dissipation
Junction temperature
Storage temperature range
V_CBO
V_CES
V_CEO
V_EBO
I_C
I_CP
I_B
P_C
T_j
T_stg
50
V
40
V
20
8
V
5
A
8
0.5
A
1.3
W
150
°C
−55 to 150
°C
Note: Conditions: Pulse width = 10 ms (max), duty cycle = 30% (max)
Electrical Characteristics (Ta = 25°C)
JEDEC
―
JEITA
―
TOSHIBA
2-8M1A
Weight: 0.55 g (typ.)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
Test Condition
I_CBO
I_EBO
V _{(BR) CEO}
h_{FE (1)}
h_{FE (2)}
V_{CE (sat)}
V_BE
f_T
C_ob
V_CB = 50 V, I_E = 0
V_EB = 8 V, I_C = 0
I_C = 10 mA, I_B = 0
V_CE = 2 V, I_C = 0.5 A
V_CE = 2 V, I_C = 4 A
I_C = 4 A, I_B = 40 mA
V_CE = 2 V, I_C = 4 A
V_CE = 2 V, I_C = 0.5 A
V_CB = 10 V, I_E = 0, f = 1 MHz
Min Typ. Max Unit
―
― 100 nA
―
― 100 nA
20
―
―
V
800 ― 3200
250 ―
―
―
―
0.5
V
―
―
1.2
V
― 150 ― MHz
―
45
―
pF
1
2004-07-26