2SC5029_04 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Power Amplifier Applications

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC5029
2SC5029
Power Amplifier Applications
Power Switching Applications
Industrial Applications
Unit: mm
• Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A, IB = 0.05 A)
• High collector power dissipation: PC = 1.3 W
• High-speed switching: tstg = 1.0 µs (typ.)
• Complementary to 2SA1892
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
Rating
Unit
50
V
50
V
5
V
3
A
0.2
A
1.3
W
150
°C
−55 to 150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-8M1A
Weight: 0.55 g (typ.)
1
2004-07-07