2SC5028_04 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Power Amplifier Applications

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC5028
Power Amplifier Applications
Power Switching Applications
2SC5028
Unit: mm
• Low collector-emitter saturation voltage: VCE (sat) = 0.5 V (max)
(IC = 1 A)
• High collector power dissipation: PC = 1.3 W
• High-speed switching: tstg = 500 ns (typ.)
• Complementary to 2SA1891
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
Rating
Unit
80
V
50
V
6
V
2
A
0.2
A
1.3
W
150
°C
−55 to 150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-8M1A
Weight: 0.55 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Test Condition
I_CBO
I_EBO
V _{(BR) CEO}
h_{FE (1)}
h_{FE (2)}
V_{CE (sat)}
V_{BE (sat)}
f_T
C_ob
V_CB = 80 V, I_E = 0
V_EB = 6 V, I_C = 0
I_C = 10 mA, I_B = 0
V_CE = 2 V, I_C = 100 mA
V_CE = 2 V, I_C = 1.5 A
I_C = 1 A, I_B = 0.05 A
I_C = 1 A, I_B = 0.05 A
V_CE = 2 V, I_C = 100 mA
V_CB = 10 V, I_C = 0, f = 1 MHz
Min Typ. Max Unit
―
―
1.0
µA
―
―
1.0
µA
50
―
―
V
120 ― 400
40
―
―
―
―
0.5
V
―
―
1.2
V
― 100 ― MHz
―
14
―
pF
Turn-on time
Switching time Storage time
Fall time
t_on
20 µs
Input ^IB1
Ootput
―
0.1
―
t_stg
I_B2
30 V
t_f
I_B1 = −I_B2 = 0.05 A, duty cycle ≤ 1%
―
0.5
―
µs
―
0.1
―
1
2004-07-26