2SC5000_04 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Power Amplifier Applications

TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5000
Power Amplifier Applications
2SC5000
Unit: mm
• Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 5 A)
Maximum Ratings (Tc = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
Rating
Unit
80
V
50
V
7
V
10
A
1
A
25
W
150
°C
−55 to 150
°C
Electrical Characteristics (Tc = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter
Saturation voltage
Base-emitter
Transition frequency
Collector output capacitance
Symbol
Test Condition
I_CBO
I_EBO
V _{(BR) CEO}
h_{FE (1)}
V_{CE (sat)}
V_{BE (sat)}
f_T
C_ob
V_CB = 70 V, I_E = 0
V_EB = 7 V, I_C = 0
I_C = 10 mA, I_B = 0
V_CE = 1 V, I_C = 1 A
I_C = 5 A, I_B = 0.25 A
I_C = 5 A, I_B = 0.25 A
V_CE = 1 V, I_C = 1 A
V_CB = 10 V, I_E = 0, f = 1 MHz
JEDEC
―
JEITA
―
TOSHIBA
2-10R1A
Weight: 1.7 g (typ.)
Min Typ. Max Unit
―
―
1
µA
―
―
1
µA
50
―
―
V
120 ― 400
― 0.19 0.4
V
― 0.96 1.4
―
90
― MHz
―
90
―
pF
Marking
C5000
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
1
2004-07-26