2SC4935_04 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – Power Amplifier Applications

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC4935
Power Amplifier Applications
2SC4935
Unit: mm
• Good hFE linearity
• Complementary to 2SA1869 and 5-watt-output applications.
Maximum Ratings (Tc = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Ta = 25°C
Tc = 25°C
Junction temperature
Storage temperature range
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
Rating
Unit
50
V
50
V
5
V
3
A
0.3
A
2.0
W
10
150
°C
−55 to 150
°C
Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
I_CBO
V_CB = 50 V, I_E = 0
I_EBO
V_EB = 5 V, I_C = 0
V _{(BR) CEO} I_C = 10 mA, I_B = 0
h_{FE (1)}
V_CE = 2 V, I_C = 0.5 A
(Note)
h_{FE (2)}
V_{CE (sat)}
V_BE
f_T
C_ob
V_CE = 2 V, I_C = 2.5 A
I_C = 2 A, I_B = 0.2 A
V_CE = 2 V, I_C = 0.5 A
V_CE = 2 V, I_C = 0.5 A
V_CB = 10 V, I_E = 0, f = 1 MHz
Note: h_{FE (1)} classification O: 70 to 140, Y: 120 to 240
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10R1A
Weight: 1.7 g (typ.)
Min Typ. Max Unit
―
―
1.0
µA
―
―
1.0
µA
50
―
―
V
70
― 240
30
―
―
―
0.4 0.6
V
― 0.75 1.0
V
―
80
― MHz
―
30
―
pF
1
2004-07-07