2SC4915-R Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – High Frequency Amplifier Applications

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC4915
High Frequency Amplifier Applications
FM, RF, MIX, If Amplifier Applications
2SC4915
Unit: mm
• Small reverse transfer capacitance: C_re = 0.55 pF (typ.)
• Low noise figure: NF = 2.3dB (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
40
V
30
V
4
V
20
mA
4
mA
100
mW
125
°C
−55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating
Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
JEDEC
―
JEITA
―
TOSHIBA
2-2H1A
Weight: 2.4 mg (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
DC current gain
Reverse transfer capacitance
Transition frequency
Collector-base time constant
Noise figure
Power gain
I_CBO
V_CB = 40 V, I_E = 0 A
I_EBO
V_EB = 4 V, I_C = 0 A
h_FE
V_CE = 6 V, I_C = 1 mA
(Note)
C_re
V_CB = 6 V, f = 1 MHz
f_T
V_CE = 6 V, I_C = 1 mA
C_c･rbb’ V_CE = 6 V, I_E = −1 mA, f = 30 MHz
NF
V_CC = 6 V, I_E = −1 mA,
G_pe
f = 100 MHz, Figure 1
Note: h_FE classification R: 40~80, O: 70~140, Y: 100~200
Min Typ. Max Unit
⎯
⎯
0.1
μA
⎯
⎯
0.5
μA
40
⎯
200
⎯ 0.55 ⎯
pF
260 550 ⎯ MHz
⎯
⎯
20
ps
⎯
2.3
5.0
dB
17
23
⎯
dB
1
2007-11-01