2SC4781_04 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Medium Power Amplifier Applications

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC4781
Strobe Flash Applications
Medium Power Amplifier Applications
2SC4781
Unit: mm
• High DC current gain and Excellent hFE linearity
: hFE (1) = 200 to 600 (VCE = 2 V, IC = 1 A)
: hFE (2) = 300 (typ.) (VCE = 2 V, IC = 4 A)
• Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 4 A, IB = 80 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulsed
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V_CBO
V_CES
V_CEO
V_EBO
I_C
I_CP
I_B
P_C
T_j
T_stg
Rating
Unit
30
V
30
V
10
6
V
4
A
8
0.8
A
900
mW
150
°C
−55 to 150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-5J1A
Weight: 0.36 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
Test Condition
I_CBO
I_EBO
V _{(BR) CEO}
h_{FE (1)}
h_{FE (2)}
V_{CE (sat)}
V_BE
f_T
C_ob
V_CB = 30 V, I_E = 0
V_EB = 6 V, I_C = 0
I_C = 10 mA, I_B = 0
V_CE = 2 V, I_C = 1 A
V_CE = 2 V, I_C = 4 A
I_C = 4 A, I_B = 80 mA
V_CE = 2 V, I_C = 4 A
V_CE = 2 V, I_C = 0.5 A
V_CB = 10 V, I_E = 0, f = 1 MHz
Min Typ. Max Unit
―
― 100 nA
―
― 100 nA
10
―
―
V
200 ― 600
140 300 ―
― 0.28 0.5
V
―
1.0 1.5
V
― 170 ― MHz
―
50
―
pF
1
2004-07-26