2SC4738FT Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Audio Frequency General Purpose Amplifier Applications

2SC4738FT
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC4738FT
Audio Frequency General Purpose Amplifier Applications
Unit: mm
· High Voltage: VCEO = 50 V
· High Current: IC = 150 mA (max)
· High hFE: hFE = 120 to 400
· Excellent hFE Linearity
: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)
· Complementary to 2SA1832FT
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
Rating
Unit
60
V
50
V
5
V
150
mA
30
mA
100
mW
125
°C
-55 to 125
°C
Marking
Type Name
h_FE Rank
LY
JEDEC
JEITA
TOSHIBA
―
―
2-1B1A
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
I_CBO
V_CB = 60 V, I_E = 0
I_EBO
V_EB = 5 V, I_C = 0
h_FE
(Note)
V_CE = 6 V, I_C = 2 mA
V_{CE (sat)} I_C = 100 mA, I_B = 10 mA
f_T
V_CE = 10 V, I_C = 1 mA
C_ob
V_CB = 10 V, I_E = 0, f = 1 MHz
Note: h_FE Classification Y (Y): 120 to 240, GR (G): 200 to 400
( ) Marking symbol
1
Min Typ. Max Unit
¾
¾
0.1
mA
¾
¾
0.1
mA
120
¾
400
―
0.1 0.25
V
80
¾
¾ MHz
¾
2.0
3.5
pF
2002-01-16