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2SC4689_04 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – Power Amplifier Applications | |||
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TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC4689
Power Amplifier Applications
2SC4689
Unit: mm
⢠Complementary to 2SA1804
⢠Suitable for use in 55-W high fidelity audio amplifierâs output stage.
Maximum Ratings (Tc = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Rating
Unit
120
V
120
V
5
V
8
A
16
0.8
A
70
W
150
°C
â55 to 150
°C
Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
ICBO
VCB = 120 V, IE = 0
IEBO
VEB = 5 V, IC = 0
V (BR) CEO IC = 50 mA, IB = 0
hFE (1)
VCE = 5 V, IC = 1 A
(Note)
hFE (2)
VCE (sat)
VBE
fT
Cob
VCE = 5 V, IC = 4 A
IC = 6 A, IB = 0.6 A
VCE = 5 V, IC = 4 A
VCE = 5 V, IC = 1 A
VCB = 10 V, IE = 0, f = 1 MHz
Note: hFE (1) classification R: 55 to 110, O: 80 to 160
JEDEC
â
JEITA
â
TOSHIBA
2-16F1A
Weight: 5.8 g (typ.)
Min Typ. Max Unit
â
â
5.0
µA
â
â
5.0
µA
120 â
â
V
55
â 160
35
75
â
â 0.35 2.0
V
â 0.95 1.5
V
â
30
â MHz
â 190 â
pF
1
2004-07-07
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