2SC4682_07 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – Silicon NPN Epitaxial Type (PCT Process) Strobe Flash Applications

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC4682
Strobe Flash Applications
Medium Power Amplifier Applications
2SC4682
Unit: mm
• Excellent h_FE linearity : h_{FE (1)} = 800 to 3200 (V_CE = 1 V, I_C = 0.5 A)
: h_{FE (2)} = 500 (typ.) (V_CE = 1 V, I_C = 3 A)
• Low saturation voltage: V_{CE (sat)} = 0.5 V (max)
(I_C = 3 A, I_B = 30 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power dissipation
Junction temperature
Storage temperature range
V_CBO
30
V
V_CES
30
V
V _{(BR) CEO}
15
V_EBO
6
V
I_C
3
A
I_CP
6
I_B
0.8
A
P_C
900
mW
T_j
150
°C
T_stg
−55 to 150
°C
JEDEC
TO-92MOD
JEITA
―
TOSHIBA
2-5J1A
Weight: 0.36 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2006-11-10