2SC4681_05 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Strobe Flash Applications Medium Power Amplifier Applications

TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC4681
Strobe Flash Applications
Medium Power Amplifier Applications
2SC4681
Unit: mm
• Excellent hFE linearity
: hFE (1) = 200 to 600 (VCE = 2 V, IC = 0.5 A)
: hFE (2) = 140 (min), 200 (typ.) (VCE = 2 V, IC = 3 A)
• Low collector saturation voltage
: VCE (sat) = 0.5 V (max) (IC = 3 A, IB = 60 mA)
• Complementary to 2SA1802
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
(Note)
Base current
Collector power
dissipation
Ta = 25°C
Tc = 25°C
Junction temperature
Storage temperature range
V_CBO
V_CES
V_CEO
V_EBO
I_C
I_CP
I_B
P_C
T_j
T_stg
30
V
30
V
10
6
V
3
A
6
0.5
A
1.0
W
10
150
°C
−55 to 150
°C
Note: Pulse test: Pulse width = 10 ms (max), duty cycle = 30% (max)
JEDEC
―
JEITA
―
TOSHIBA
2-7B1A
Weight: 0.36 g (typ.)
1
2005-02-01