2SC4667_03 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Ultra High Speed Switching Applications Computer, Counter Applications

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC4667
Ultra High Speed Switching Applications
Computer, Counter Applications
2SC4667
Unit: mm
· High transition frequency: fT = 400 MHz (typ.)
· Low saturation voltage: VCE (sat) = 0.3 V (max)
· High speed switching time: tstg = 15 ns (typ.)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
Rating
Unit
40
V
15
V
5
V
200
mA
40
mA
100
mW
125
°C
-55~125
°C
Marking
JEDEC
―
JEITA
SC-70
TOSHIBA
2-2E1A
Weight: 0.006 g (typ.)
1
2003-03-27