2SC4666_07 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – Silicon NPN Epitaxial Type (PCT process) Audio Frequency Amplifier Applications

2SC4666
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC4666
Audio Frequency Amplifier Applications
Switching Applications
• High h_FE: h_FE = 600~3600
• High voltage: V_CEO = 50 V
• High collector current: I_C = 150 mA (max)
• Small package
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
Rating
Unit
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
50
V
50
V
5
V
150
mA
30
mA
100
mW
125
°C
−55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
JEDEC
―
JEITA
SC-70
TOSHIBA
2-2E1A
Weight: 0.006 g (typ.)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
Symbol
Test Condition
I_CBO
I_EBO
V_CB = 50 V, I_E = 0
V_EB = 5 V, I_C = 0
h_FE
(Note)
V_CE = 6 V, I_C = 2 mA
V_{CE (sat)} I_C = 100 mA, I_B = 10 mA
f_T
C_ob
NF (1)
V_CE = 10 V, I_C = 10 mA
V_CB = 10 V, I_E = 0, f = 1 MHz
V_CE = 6 V, I_C = 0.1 mA, f = 100 Hz,
Rg = 10 kΩ
NF (2)
V_CE = 6 V, I_C = 0.1 mA, f = 1 kHz,
Rg = 10 kΩ
Note: h_FE classification A: 600~1800, B: 1200~3600
Marking
Min Typ. Max Unit
⎯
⎯
0.1
μA
⎯
⎯
0.1
μA
600 ⎯ 3600
⎯
0.12 0.25
V
100 250 ⎯ MHz
⎯
3.5
⎯
pF
⎯
0.5
⎯
dB
⎯
0.3
⎯
1
2007-11-01