2SC4604_04 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – Power Amplifier Application Power Switching Applications.

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC4604
Power Amplifier Application.
Power Switching Applications.
2SC4604
Unit: mm
• Low collector-emitter saturation voltage: VCE (sat) = 0.5 V (max)
(IC = 1.5 A)
• High-speed switching: tstg = 0.5 µs (typ.)
• Complementary to 2SA1761
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
Rating
Unit
80
V
50
V
6
V
3
A
0.6
A
900
mW
150
°C
−55 to 150
°C
Electrical Characteristics (Ta = 25°C)
JEDEC
TO-92MOD
JEITA
―
TOSHIBA
2-5J1A
Weight: 0.36 g (typ.)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Test Condition
I_CBO
I_EBO
V _{(BR) CEO}
h_{FE (1)}
h_{FE (2)}
V_{CE (sat)}
V_{BE (sat)}
f_T
C_ob
V_CB = 80 V, I_E = 0
V_EB = 6 V, I_C = 0
I_C = 10 mA, I_E = 0
V_CE = 2 V, I_C = 100 mA
V_CE = 2 V, I_C = 2 A
I_C = 1.5 A, I_B = 75 mA
I_C = 1.5 A, I_B = 75 mA
V_CE = 2 V, I_C = 100 mA
V_CB = 10 V, I_E = 0, f = 1 MHz
Min Typ. Max Unit
―
―
0.1
µA
―
―
0.1
µA
50
―
―
V
120 ― 400
40
―
―
―
―
0.5
V
―
―
1.2
V
― 100 ― MHz
―
20
―
pF
Turn-on time
Switching time Storage time
Fall time
t_on
20 µs
Input ^IB1
Output
―
0.1
―
t_stg
I_B2
30 V
t_f
I_B1 = −I_B2 = 75 mA, duty cycle ≤ 1%
―
0.5
―
µs
―
0.1
―
1
2004-07-26