2SC4497_03 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – High Voltage Control Applications

2SC4497
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process)
2SC4497
High Voltage Control Applications
· High voltage: VCBO = 300 V, VCEO = 300 V
· Low saturation voltage: VCE (sat) = 0.5 V (max)
· Small collector output capacitance: Cob = 3 pF (typ.)
· Complementary to 2SA1721
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
Rating
Unit
300
V
300
V
6
V
100
mA
20
mA
200
mW
150
°C
-55~150
°C
Marking
Unit: mm
JEDEC
TO-236MOD
JEITA
SC-59
TOSHIBA
2-3F1A
Weight: 0.012 g (typ.)
1
2003-03-27