2SC4409_04 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – Power Amplifier Applications Power switching applications

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC4409
Power Amplifier Applications
Power switching applications
2SC4409
Unit: mm
• Low collector saturation voltage: VCE (sat) = 0.5V (max) (at IC = 1A)
• High speed switching time: tstg = 500ns (typ.)
• Small flat package
• PC = 1~2 W (Mounted on a ceramic substrate)
• Complementary to 2SA1681
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V_CBO
80
V
Collector-emitter voltage
V_CEO
50
V
Emitter-base voltage
V_EBO
6
V
Collector current
I_C
2
A
Base current
I_B
0.2
A
Collector power dissipation
P_C
500
mW
Collector power dissipation
P_C (Note)
1000
mW
Junction temperature
T_j
150
°C
Storage temperature range
T_stg
−55~150
°C
Note: 2SC4409 mounted on a ceramic substrate (250 mm² × 0.8 t)
JEDEC
―
JEITA
SC-62
TOSHIBA
2-5K1A
Weight: 0.05 g (typ.)
1
2004-07-07