2SC4253_07 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – Silicon NPN Epitaxial Planar Type TV Final Picture IF Amplifier Applications

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC4253
2SC4253
TV Final Picture IF Amplifier Applications
• Good linearity of f_T
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
Rating
Unit
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
30
V
25
V
4
V
50
mA
25
mA
100
mW
125
°C
−55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
JEDEC
―
JEITA
SC-70
TOSHIBA
2-2E1A
Weight: 0.006 g (typ.)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter
Saturation voltage
Base-emitter
Collector output capacitance
Collector-base time constant
Transition frequency
Symbol
Test Condition
I_CBO
I_EBO
V _{(BR) CEO}
h_FE
V_{CE (sat)}
V_{BE (sat)}
C_ob
C_c･rbb’
f_T
V_CB = 30 V, I_E = 0
V_EB = 3 V, I_C = 0
I_C = 1 mA, I_B = 0
V_CE = 10 V, I_C = 10 mA
I_C = 15 mA, I_B = 1.5 mA
V_CB = 10 V, I_E = 0, f = 1 MHz
V_CB = 10 V, I_C = 1 mA, f = 30 MHz
V_CE = 10 V, I_C = 10 mA
Min Typ. Max Unit
⎯
⎯
0.1
μA
⎯
⎯
0.1
μA
25
⎯
⎯
V
20
70 200
⎯
⎯
0.2
V
⎯
⎯
1.5
⎯
1.1
1.6
pF
⎯
⎯
25
ps
250 600 ⎯ MHz
Marking
1
2007-11-01