2SC4250_07 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Silicon NPN Epitaxial Planar Type TV VHF Mixer Applications

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC4250
2SC4250
TV VHF Mixer Applications
Unit: mm
• High conversion gain: G_ce = 25dB (typ.)
• Low reverse transfer capacitance: C_re = 0.45 pF (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
30
V
20
V
3
V
50
mA
25
mA
100
mW
125
°C
−55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
JEDEC
―
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
JEITA
SC-70
reliability significantly even if the operating conditions (i.e.
TOSHIBA
2-2E1A
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Weight: 0.006 g (typ.)
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Reverse transfer capacitance
Transition frequency
Conversion gain
Noise figure
Symbol
Test Condition
Min
I_CBO
V_CB = 25 V, I_E = 0
⎯
I_EBO
V_EB = 3 V, I_C = 0
⎯
V _{(BR) CEO} I_C = 1 mA, I_B = 0
20
h_FE
V_CE = 10 V, I_C = 5 mA
40
C_re
V_CB = 10 V, I_E = 0, f = 1 MHz
⎯
f_T
V_CE = 10 V, I_C = 5 mA
900
G_ce
V_CC = 12 V, f = 200 MHz, f_L = 260 MHz 20
NF
(Figure 1)
⎯
Typ. Max Unit
⎯
⎯
⎯
150
0.45
1400
25
4.3
100
1000
⎯
300
0.6
⎯
⎯
6
nA
nA
V
pF
MHz
dB
dB
1
2007-11-01