2SC4247_07 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – Silicon NPN Epitaxial Planar Type TV Tuner, UHF Oscillator Applications

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC4247
TV Tuner, UHF Oscillator Applications
(common collector)
2SC4247
Unit: mm
• Transition frequency is high and dependent on current excellently.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Base current
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
V_CBO
V_CEO
V_EBO
I_B
I_C
P_C
T_j
T_stg
20
V
12
V
3
V
15
mA
30
mA
100
mW
125
°C
−55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
JEDEC
JEITA
―
SC-70
reliability significantly even if the operating conditions (i.e.
TOSHIBA
2-2E1A
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Weight: 0.006 g (typ.)
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Transition frequency
Output capacitance
Collector-base time constant
Symbol
Test Condition
I_CBO
I_EBO
V _{(BR) CEO}
h_FE
f_T
C_ob
C_c･rbb’
V_CB = 10 V, I_E = 0
V_EB = 2 V, I_C = 0
I_C = 1 mA, I_B = 0
V_CE = 10 V, I_C = 5 mA
V_CE = 10 V, I_C = 10 mA
V_CB = 10 V, I_E = 0, f = 1 MHz
V_CB = 10 V, I_C = 5 mA, f = 30 MHz
Min Typ. Max Unit
⎯
⎯
0.1
μA
⎯
⎯
1.0
μA
12
⎯
⎯
V
35
⎯
130
2.6
4
⎯ GHz
⎯ 1.05 1.35 pF
⎯
4.5
9.0
ps
Marking
1
2007-11-01