2SC4215_07 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Silicon NPN Epitaxial Planar Type High Frequency Amplifier Applications

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC4215
High Frequency Amplifier Applications
FM, RF, MIX, IF Amplifier Applications
2SC4215
Unit: mm
• Small reverse transfer capacitance: C_re = 0.55 pF (typ.)
• Low noise figure: NF = 2dB (typ.) (f = 100 MHz)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
V_CBO
40
V
V_CEO
30
V
V_EBO
4
V
I_C
20
mA
I_B
4
mA
P_C
100
mW
T_j
125
°C
T_stg
−55~125
°C
JEDEC
―
Note: Using continuously under heavy loads (e.g. the application of high
JEITA
SC-70
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
TOSHIBA
2-2E1A
reliability significantly even if the operating conditions (i.e.
Weight: 0.006 g (typ.)
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
DC current gain
Reverse transfer capacitance
Transition frequency
Collector-base time constant
Noise figure
Power gain
I_CBO
I_EBO
V_CB = 40 V, I_E = 0
V_EB = 4 V, I_C = 0
h_FE
V_CE = 6 V, I_C = 1 mA
(Note)
C_re
f_T
C_c･r_bb’
V_CB = 10 V, f = 1 MHz
V_CE = 6 V, I_C = 1 mA
V_CE = 6 V, I_E = −1 mA, f = 30 MHz
NF
V_CC = 6 V, I_E = −1 mA, f = 100 MHz,
G_pe
Figure 1
Note: h_FE classification R: 40~80, O: 70~140, Y: 100~200
Min Typ. Max Unit
⎯
⎯
0.1
μA
⎯
⎯
0.5
μA
40
⎯
200
⎯ 0.55 ⎯
pF
260 550 ⎯ MHz
⎯
⎯
25
ps
⎯
2
5.0
dB
17
23
⎯
dB
1
2007-11-01