2SC4214_07 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Silicon NPN Planar Type UHF TV Tuner RF Amplifier Applications

TOSHIBA Transistor Silicon NPN Planar Type
2SC4214
2SC4214
UHF TV Tuner RF Amplifier Applications
Unit: mm
• Low noise figure: NF = 2.8dB (typ.)
• High power gain V_CC = 4.5 V: G_pb = 15dB (typ.)
• Excellent forward AGC characteristics
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V_CBO
25
V
Collector-emitter voltage
V_CEO
20
V
Emitter-base voltage
V_EBO
2
V
Base current
I_B
4
mA
Collector current
I_C
20
mA
Collector power dissipation
P_C
150
mW
Junction temperature
T_j
125
°C
Storage temperature range
T_stg
−55~125
°C
JEDEC
―
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
JEITA
―
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
TOSHIBA
2-3J1B
Weight: 0.013 g (typ.)
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Transition frequency
Reverse transfer capacitance
Power gain
Noise figure
AGC voltage
Symbol
Test Condition
Min
I_CBO
V_CB = 10 V, I_E = 0
⎯
I_EBO
V_EB = 2 V, I_C = 0
⎯
V _{(BR) CEO} I_C = 1 mA, I_B = 0
20
h_FE
V_CE = 3.0 V, I_C = 1 mA
40
f_T
V_CE = 3.0 V, I_C = 1 mA
500
C_rb
V_CE = 2.0 V, I_B = 0, f = 1 MHz
⎯
G_pb
V_CC = 4.5 V, V_AGC = 2.0 V
10
NF
f = 800 MHz (Figure 1)
⎯
V_AGC
V_CC = 4.5 V, G.R. = −20dB
f = 800 MHz
2.5
(Note)
Typ.
⎯
⎯
⎯
100
850
0.3
15
2.8
3.2
Max Unit
0.1
μA
1
μA
⎯
V
⎯
⎯ MHz
0.5
pF
⎯
dB
4.5
dB
4.0
V
1
2007-11-01