2SC4213-B Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – For Muting and Switching Applications

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC4213
2SC4213
For Muting and Switching Applications
Unit: mm
• High emitter-base voltage: V_EBO = 25 V (min)
• High reverse h_FE: Reverse h_FE = 150 (typ.) (V_CE = −2 V, I_C = −4 mA)
• Low on resistance: R_ON = 1 Ω (typ.) (I_B = 5 mA)
• High DC current gain: h_FE = 200~1200
• Small package
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V_CBO
50
V
Collector-emitter voltage
V_CEO
20
V
Emitter-base voltage
V_EBO
25
V
Collector current
I_C
300
mA
Base current
I_B
60
mA
Collector power dissipation
P_C
100
mW
JEDEC
―
Junction temperature
Storage temperature range
T_j
125
°C
T_stg
−55~125
°C
JEITA
TOSHIBA
SC-70
2-2E1A
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
Weight: 0.006 g (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Marking
1
2007-11-01