2SC4210_03 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Audio Power Amplifier Applications

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC4210
2SC4210
Audio Power Amplifier Applications
Unit: mm
· High DC current gain: hFE = 100~320
· Complementary to 2SA1621
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
Rating
Unit
35
V
30
V
5
V
800
mA
160
mA
200
mW
150
°C
-55~150
°C
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
I_CBO
V_CB = 35 V, I_E = 0
I_EBO
V_EB = 5 V, I_C = 0
V _{(BR) CEO} I_C = 10 mA, I_B = 0
h_{FE (1)}
V_CE = 1 V, I_C = 100 mA
(Note)
h_{FE (2)} V_CE = 1 V, I_C = 700 mA
V_{CE (sat)} I_C = 500 mA, I_B = 20 mA
V_BE
V_CE = 1 V, I_C = 10 mA
f_T
V_CE = 5 V, I_C = 10 mA
C_ob
V_CB = 10 V, I_E = 0, f = 1 MHz
Note: h_{FE (1)} classification O: 100~200, Y: 160~320
Marking
JEDEC
TO-236MOD
JEITA
SC-59
TOSHIBA
2-3F1A
Weight: 0.012 g (typ.)
Min Typ. Max Unit
¾
¾
0.1
mA
¾
¾
0.1
mA
30
¾
¾
V
100 ¾ 320
35
¾
¾
¾
¾
0.5
V
0.5
¾
0.8
V
¾ 120 ¾ MHz
¾
13
¾
pF
1
2003-03-25