2SC4207_07 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – Silicon NPN Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC4207
2SC4207
Audio Frequency General Purpose Amplifier Applications
Unit: mm
• Small package (dual type)
• High voltage and high current: V_CEO = 50 V, I_C = 150 mA (max)
• High h_FE: h_FE = 120~700
• Excellent h_FE linearity: h_FE (I_C = 0.1 mA)/h_FE (I_C = 2 mA) = 0.95 (typ.)
• Complementary to 2SA1618
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 common)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
V_CBO
60
V
V_CEO
50
V
V_EBO
5
V
I_C
150
mA
I_B
30
mA
P_C
300
mW
(Note 1)
T_j
125
°C
T_stg
−55~125
°C
JEDEC
JEITA
TOSHIBA
―
―
2-3L1A
Note:
Using continuously under heavy loads (e.g. the application of
Weight: 0.014 g (typ.)
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating
Marking
Equivalent Circuit (top view)
1
2007-11-01