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2SC4207-Y Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – Audio Frequency General Purpose Amplifier Applications | |||
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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC4207
2SC4207
Audio Frequency General Purpose Amplifier Applications
Unit: mm
⢠Small package (dual type)
⢠High voltage and high current: VCEO = 50 V, IC = 150 mA (max)
⢠High hFE: hFE = 120~700
⢠Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)
⢠Complementary to 2SA1618
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 common)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
150
mA
Base current
IB
30
mA
Collector power dissipation
Junction temperature
Storage temperature range
PC
300
mW
(Note 1)
Tj
125
°C
Tstg
â55~125
°C
Note: Using continuously under heavy loads (e.g. the application of
JEDEC
â
JEITA
â
TOSHIBA
2-3L1A
Weight: 0.014 g (typ.)
high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(âHandling Precautionsâ/âDerating Concept and Methodsâ) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating
Marking
Equivalent Circuit (top view)
1
2007-11-01
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