2SC4116_07 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – Silicon NPN Epitaxial Type (PCT process)

2SC4116
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC4116
Audio Frequency General Purpose Amplifier Applications
• High voltage and high current: V_CEO = 50 V, I_C = 150 mA (max)
• Excellent h_FE linearity: h_FE (I_C = 0.1 mA)/h_FE (I_C = 2 mA) = 0.95 (typ.)
• High h_FE: h_FE = 70~700
• Low noise: NF = 1dB (typ.), 10dB (max)
• Complementary to 2SA1586
• Small package
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V_CBO
60
V
Collector-emitter voltage
V_CEO
50
V
Emitter-base voltage
V_EBO
5
V
Collector current
I_C
150
mA
Base current
I_B
30
mA
Collector power dissipation
P_C
100
mW
Junction temperature
T_j
125
°C
Storage temperature range
T_stg
−55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
JEDEC
―
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
JEITA
TOSHIBA
SC-70
2-2E1A
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Weight: 0.006 g (typ.)
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
(Note)
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
Symbol
Test Condition
I_CBO
I_EBO
V_CB = 60 V, I_E = 0
V_EB = 5 V, I_C = 0
h_FE
(Note)
V_CE = 6 V, I_C = 2 mA
V_{CE (sat)}
f_T
I_C = 100 mA, I_B = 10 mA
V_CE = 10 V, I_C = 1 mA
C_ob
V_CB = 10 V, I_E = 0, f = 1 MHz
NF
V_CE = 6 V, I_C = 0.1 mA, f = 1 kHz,
R_g = 10 kΩ,
Min Typ. Max Unit
⎯
⎯
0.1
μA
⎯
⎯
0.1
μA
70
⎯
700
⎯
0.1 0.25
V
80
⎯
⎯ MHz
⎯
2.0
3.5
pF
⎯
1.0
10
dB
Note: h_FE classification O (O): 70~140, Y (Y): 120~240, GR (G): 200~400, BL (L): 350~700, ( ) marking symbol
Marking
1
2007-11-01