2SC3964_04 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Switching Applications Solenoid Drive Applications Temperature Compensated for Audio Amplifier Output Stage

TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC3964
2SC3964
Switching Applications
Solenoid Drive Applications
Temperature Compensated for Audio Amplifier Output
Stage
Industrial Applications
Unit: mm
• High DC current gain: hFE = 500 (min) (IC = 400 mA)
• Low collector-emitter saturation voltage: VCE (sat) = 0.5 V (max)
(IC = 300 mA)
Maximum Ratings (Tc = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
Rating
Unit
40
V
40
V
7
V
2
A
0.5
A
1.5
W
150
°C
−55 to 150
°C
Electrical Characteristics (Tc = 25°C)
JEDEC
―
JEITA
―
TOSHIBA
2-8H1A
Weight: 0.82 g (typ.)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Test Condition
I_CBO
I_EBO
V _{(BR) CEO}
h_FE
V_{CE (sat)}
V_{BE (sat)}
f_T
C_ob
V_CB = 40 V, I_E = 0
V_EB = 7 V, I_C = 0
I_C = 10 mA, I_B = 0
V_CE = 1 V, I_C = 400 mA
I_C = 300 mA, I_B = 1 mA
I_C = 300 mA, I_B = 1 mA
V_CE = 2 V, I_C = 100 mA
V_CB = 10 V, I_B = 0, f = 1 MHz
Min Typ. Max Unit
―
―
10
µA
―
―
1
µA
40
―
―
V
500 ―
―
―
0.3 0.5
V
―
―
1.1
V
― 220 ― MHz
―
20
―
pF
Turn-on time
Switching time Storage time
Fall time
t_on
20 µs
Input ^IB1
Output
―
1.0
―
t_stg
I_B2
V_CC = 30 V
t_f
I_B1 = −I_B2 = 1 mA, duty cycle ≤ 1%
―
3.0
―
µs
―
1.2
―
1
2004-07-26