2SC3803_04 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – High Frequency Amplifier Applications Video Amplifier Applications High Speed Switching Applications

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC3803
High Frequency Amplifier Applications
Video Amplifier Applications
High Speed Switching Applications
2SC3803
Unit: mm
• High transition frequency: fT = 200 MHz (typ.)
• Low collector output capacitance: Cob = 3.5 pF (typ.)
• Complementary to 2SA1483
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Continuous collector current
Continuous base current
Collector power dissipation
V_CBO
60
V
V_CEO
45
V
V_EBO
5
V
I_C
200
mA
I_B
50
mA
P_C
500
P_C
mW
1000
(Note 1)
Junction temperature
Storage temperature range
T_j
150
°C
T_stg
−55 to 150
°C
Note 1: Mounted on a ceramic substrate (250 mm² × 0.8 t)
PW-MINI
JEDEC
―
JEITA
SC-62
TOSHIBA
2-5K1A
Weight: 0.05 g (typ.)
1
2004-07-07