2SC3803-R Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – High Frequency Amplifier Applications Video Amplifier Applications High Speed Switching Applications

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC3803
High Frequency Amplifier Applications
Video Amplifier Applications
High Speed Switching Applications
2SC3803
Unit: mm
• High transition frequency: f_T = 200 MHz (typ.)
• Low collector output capacitance: C_ob = 3.5 pF (typ.)
• Complementary to 2SA1483
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Continuous collector current
Continuous base current
Collector power dissipation
Junction temperature
Storage temperature range
V_CBO
60
V
V_CEO
45
V
V_EBO
5
V
I_C
200
mA
I_B
50
mA
P_C
500
P_C
mW
1000
(Note 1)
T_j
150
°C
T_stg
−55 to 150
°C
PW-MINI
JEDEC
―
JEITA
SC-62
TOSHIBA
2-5K1A
Weight: 0.05 g (typ.)
Note 1: Mounted on a ceramic substrate (250 mm² × 0.8 t)
Note 2:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2009-12-21