2SC3710A-YF Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – High-Power Switching Applications

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC3710A
2SC3710A
High-Power Switching Applications
Unit: mm
• Low collector saturation voltage: V_{CE (sat)} = 0.4 V (max)
• High-speed switching: t_stg = 1.0 μs (typ.)
• Complementary to 2SA1452A
Absolute Maximum Ratings (T_a = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V_CBO
80
V
Collector-emitter voltage
V_CEO
80
V
Emitter-base voltage
V_EBO
6
V
Collector current
I_C
12
A
Base current
I_B
2
A
Collector power dissipation
(Tc = 25°C)
P_C
30
W
JEDEC
―
Junction temperature
Storage temperature range
T_j
150
°C
T_stg
−55 to 150
°C
JEITA
TOSHIBA
―
2-10R1A
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
Weight: 1.7 g (typ.)
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2010-12-21